• Part: D2025UK
  • Description: Metal Gate RF Silicon FET
  • Manufacturer: Semelab
  • Size: 18.30 KB
Download D2025UK Datasheet PDF
Semelab
D2025UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE - LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM DIM A B C D E F G H mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67 Tol. 0.38 0.13 5° 0.13 0.03 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF APPLICATIONS - VHF/UHF MUNICATIONS from DC to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 65V ±20V 1A - 65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Document Number 5855 Issue 1 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise...