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TetraFET
D2025UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
1
2
4
A
3
B
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 400MHz SINGLE ENDED
FEATURES
D E F
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
DW
PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE
G
H
• LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM
DIM A B C D E F G H
mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67
Tol. 0.38 0.13 5° 0.13 0.03 0.13 0.20 REF
Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120
Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.
D2025UK Datasheet
