VP1008CSM4 - P-CHANNEL ENHANCEMENT MODE MOSFET

Features

BVDSS =100V.
ID = 300mA 0.23 min. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1.
Hermetic Surface Mount Package.
Screening Option Available 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) www. DataSheet4U. com LCC3.

Seme LAB

Datasheet Details

Part number	VP1008CSM4
Manufacturer	Seme LAB
File Size	57.20 KB
Description	P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	VP1008CSM4 Datasheet
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www.DataSheet4U.com VP1008CSM4 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL ENHANCEMENT MODE MOSFET 1.40 ± 0.15 (0.055 ± 0.006) 0.25 ± 0.03 (0.01 ± 0.001) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • BVDSS =100V • ID = 300mA 0.23 min. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 • Hermetic Surface Mount Package • Screening Option Available 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) www.DataSheet4U.

Published: Apr 16, 2005 |