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SML50B26F - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET

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Part number SML50B26F
Manufacturer Seme LAB
File Size 167.52 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET
Datasheet download datasheet SML50B26F Datasheet

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SML50B26F TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 500V 26A ID(cont) RDS(on) 0.200Ω • • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–247 Package Fast Recovery Body Diode 2.21 (0.087) 2.59 (0.102) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) M ax. 5.25 (0.215) BSC Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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