• Part: D2003UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 104.45 KB
Download D2003UK Datasheet PDF
Seme LAB
D2003UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - VERY LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - VHF/UHF MUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 35W BVDSS Drain - Source Breakdown Voltage - 65V BVGSS Gate - Source Breakdown Voltage - ±20V ID(sat) Drain Current - 1A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C - Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Document Number 3416 Issue 2 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER...