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BUL58B - NPN Transistor

Features

  • 2.54 2.54 TO220 Pin 1.
  • Base Pin 2.
  • Collector Pin 3.
  • Emitter.
  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages.

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Datasheet preview – BUL58B

Datasheet Details

Part number BUL58B
Manufacturer Seme LAB
File Size 19.53 KB
Description NPN Transistor
Datasheet download datasheet BUL58B Datasheet
Additional preview pages of the BUL58B datasheet.

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Full PDF Text Transcription

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LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL58B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING FEATURES 2.54 2.54 TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages.
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