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BUL53BSMD
MECHANICAL DATA Dimensions in mm
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
• CERAMIC SURFACE MOUNT PACKAGE • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE (VCBO = 800V) • FAST SWITCHING (tf = 100ns) • HIGH ENERGY RATING
0 .7 6 (0 .0 3 0 ) m in .
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .
BUL53BSMD Datasheet
