Datasheet4U Logo Datasheet4U.com

BFX48 - PNP SILICON EPITAXIAL TRANSISTOR

📥 Download Datasheet

Datasheet preview – BFX48

Datasheet Details

Part number BFX48
Manufacturer Seme LAB
File Size 18.59 KB
Description PNP SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet BFX48 Datasheet
Additional preview pages of the BFX48 datasheet.

📁 Similar Datasheet

  • BFX48 - PNP Transistor (SGS-ATES)
  • BFX48 - High Frequency Amplifier (STMicroelectronics)
  • BFX48 - SWITCHING TRANSISTOR (Motorola)
  • BFX40 - HIGH CURRENT TRANSISTOR (Motorola)
  • BFX40 - PNP Transistor (SGS-ATES)
  • BFX41 - HIGH CURRENT TRANSISTOR (Motorola)
  • BFX41 - PNP Transistor (SGS-ATES)
  • BFX11 - PNP Transistor (SGS-ATES)
  • BFX11 - DUAL AMPLIFIER TRANSISTOR (Motorola)
  • BFX15 - Dual NPN Transistor (SGS-ATES)
Other Datasheets by Seme LAB
  • BFX40 - PNP SILICON EPITAXIAL TRANSISTOR
  • BFX41 - PNP SILICON EPITAXIAL TRANSISTOR
  • BFX17 - Bipolar NPN Device
  • BFX34 - HIGH CURRENT GENERAL PURPOSE TRANSISTOR
  • BFX37 - Bipolar PNP Device
  • BFX38 - PNP SILICON EPITAXIAL TRANSISTOR
  • BFX39 - PNP SILICON EPITAXIAL TRANSISTOR
  • BFX84 - Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Full PDF Text Transcription

Click to expand full text
BFX48 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON EPITAXIAL TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) APPLICATIONS • It is suitable for a wide range of applications including low noise, low current high gain RF and wide band pulse amplifiers. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO18 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC Ptot Tj, Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage(IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Total Power Dissipation Tamb £ 25°C Tcase £ 25°C -30V -30V -5V -100mA 0.
Published: |