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2N6261 - HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR

Key Features

  • 0.71 (0.028) 0.86 (0.034).
  • fT = 800 kHz at 0.2A 11.94 (0.470) 12.70 (0.500) 24.33 (0.958) 24.43 (0.962) 14.48 (0.570) 14.99 (0.590).
  • Maximum Safe-area of operation curves for dc and pulse operation.
  • VCEV(sus) = 90V min.
  • Low Saturation Voltage: VCE(sat = 1.0V at IC = 0.5A) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750).

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Datasheet Details

Part number 2N6261
Manufacturer Seme LAB
File Size 18.34 KB
Description HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR
Datasheet download datasheet 2N6261 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6261 MECHANICAL DATA Dimensions in mm(inches) HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. FEATURES 0.71 (0.028) 0.86 (0.034) • fT = 800 kHz at 0.2A 11.94 (0.470) 12.70 (0.500) 24.33 (0.958) 24.43 (0.962) 14.48 (0.570) 14.99 (0.590) • Maximum Safe-area of operation curves for dc and pulse operation. • VCEV(sus) = 90V min • Low Saturation Voltage: VCE(sat = 1.0V at IC = 0.5A) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) APPLICATIONS • Power Switching Circuits • Series and shunt-regulator driver and output stages • High-fidelity amplifers • Solenoid Drivers TO–66 PIN 1 — Base PIN 2 — Emitter Case is Collector.