Datasheet4U Logo Datasheet4U.com

SSRF04N60SL - N-Channel MOSFET

Datasheet Summary

Description

The SSRF04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source ITO-220 BN MA D E H JC K LL G F REF. A B C D E F G Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4.

📥 Download Datasheet

Datasheet preview – SSRF04N60SL

Datasheet Details

Part number SSRF04N60SL
Manufacturer SeCoS
File Size 493.07 KB
Description N-Channel MOSFET
Datasheet download datasheet SSRF04N60SL Datasheet
Additional preview pages of the SSRF04N60SL datasheet.
Other Datasheets by SeCoS

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SSRF04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source ITO-220 BN MA D E H JC K LL G F REF. A B C D E F G Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.
Published: |