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Elektronische Bauelemente
SSPRDJ6560-C
N-Ch: 6.8A, 60V, RDS(ON) 45mΩ P-Ch: -5.1A, -60V, RDS(ON) 82mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSPRDJ6560-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSPRDJ6560-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available
MARKING
J6560
=Date Code
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8DJ
5K
Leader Size 13 inch
DFN3x3-8DJ
REF.
A B C D E F G
Millimeter
Min. Max.
2.9
3.
SSPRDJ6560-C Datasheet
