SSPRDJ4504-C Datasheet PDF - SeCoS Dual-Channel MOSFET Specs

SSPRDJ4504-C - Dual-Channel MOSFET

Datasheet Summary

Description

The SSPRDJ4504-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

Datasheet Details

Part number	SSPRDJ4504-C
Manufacturer	SeCoS
File Size	315.27 KB
Description	Dual-Channel MOSFET
Datasheet	SSPRDJ4504-C Datasheet
Additional preview pages of the SSPRDJ4504-C datasheet.

📁 Similar Datasheet

SSPRV30N03A - Dual Symmetric N-Channel MOSFET (WILLAS)

SSP-T - Surface Mount Quartz Crystal (ETC)

SSP-T5 - Surface Mount Quartz Crystal (ETC)

SSP-T7-F - SMD Quartz Crystal (Seiko)

SSP-T7-FL - SMD Quartz Crystal (Seiko)

SSP0430A-800480 - SPI TFT LCD Module (Surenoo)

SSP100 - (SSP80 / SSP100) Surround Sound Processor Manual (HALCRO)

SSP10N60A - Advanced Power MOSFET (Fairchild Semiconductor)

SSP10N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)

SSP11N60C2 - Power Transistor (infineon)

Full PDF Text Transcription

Click to expand full text

Elektronische Bauelemente SSPRDJ4504-C N-Ch: 8.2A, 40V, RDS(ON) 30mΩ P-Ch: -6.4A, -40V, RDS(ON) 40mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPRDJ4504-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPRDJ4504-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J4504 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch DFN3x3-8DJ REF. A B C D E F G Millimeter Min. Max. 2.9 3.

Published: Aug 3, 2020 |