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SSPRDJ4503A-C - N & P-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSPRDJ4503A-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Datasheet preview – SSPRDJ4503A-C

Datasheet Details

Part number SSPRDJ4503A-C
Manufacturer SeCoS
File Size 673.33 KB
Description N & P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSPRDJ4503A-C Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SSPRDJ4503A-C N-Ch: 25.8A, 30V, RDS(ON) 18mΩ P-Ch: -20.7A, -30V, RDS(ON) 28mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPRDJ4503A-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPRDJ4503A-C meet the RoHS and Green Product requirement with full function reliability approved. DFN3x3-8DJ FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J4503A =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.
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