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SSPRDJ4411-C - Dual P-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSPRDJ4411-C is the highest performance trench Dual P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet preview – SSPRDJ4411-C

Datasheet Details

Part number SSPRDJ4411-C
Manufacturer SeCoS
File Size 346.32 KB
Description Dual P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSPRDJ4411-C Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SSPRDJ4411-C -16A, -30V, RDS(ON) 32mΩ Dual P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPRDJ4411-C is the highest performance trench Dual P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPRDJ4411-C meet the RoHS and Green Product requirement with full function reliability approved. DFN3x3-8DJ FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING J4411  =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.
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