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SSPRDJ3522-C - Dual N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSPRDJ3522-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Datasheet preview – SSPRDJ3522-C

Datasheet Details

Part number SSPRDJ3522-C
Manufacturer SeCoS
File Size 248.12 KB
Description Dual N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSPRDJ3522-C Datasheet
Additional preview pages of the SSPRDJ3522-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSPRDJ3522-C 35A, 30V, RDS(ON) 11mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPRDJ3522-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPRDJ3522-C meet the RoHS and Green Product requirement with full function reliability approved. DFN3x3-8DJ FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J3522 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.
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