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SSPR33N06S-C - N-Channel Enhancement Mode Power MosFET

Datasheet Summary

Description

The SSPR33N06S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet preview – SSPR33N06S-C

Datasheet Details

Part number SSPR33N06S-C
Manufacturer SeCoS
File Size 659.65 KB
Description N-Channel Enhancement Mode Power MosFET
Datasheet download datasheet SSPR33N06S-C Datasheet
Additional preview pages of the SSPR33N06S-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSPR33N06S-C 33A, 60V, RDS(ON) 11.5mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPR33N06S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR33N06S-C meet the RoHS and Green Product requirement with full function reliability approved.
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