SSPR10N06-C Datasheet PDF - SeCoS N-Channel Enhancement Mode Power MOSFET Specs

SSPR10N06-C - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSPR10N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSPR10N06-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

Advanced High Cell Density Trench Technology.
Super Low Gate Charge.
Green Device Available.

Datasheet Details

Part number	SSPR10N06-C
Manufacturer	SeCoS
File Size	260.35 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	SSPR10N06-C Datasheet
Additional preview pages of the SSPR10N06-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSPR10N06-C 10A, 60V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPR10N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR10N06-C meet the RoHS and Green Product requirement with full function reliability approved.

Published: May 27, 2024 |