SSI20N5E-C Datasheet PDF - SeCoS Dual N-Ch Enhancement Mode Power MOSFET Specs

SSI20N5E-C - Dual N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

Advanced High Cell Density Trench Technology.
Super Low Gate Charge.
Green Device Available.

Datasheet Details

Part number	SSI20N5E-C
Manufacturer	SeCoS
File Size	471.17 KB
Description	Dual N-Ch Enhancement Mode Power MOSFET
Datasheet	SSI20N5E-C Datasheet
Additional preview pages of the SSI20N5E-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSI20N5E-C 0.56A, 20V, RDS(ON) 450mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI20N5E-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 20N5E PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch SOT-563 REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF.

Published: May 28, 2024 |