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SSG9575 - P-Channel MOSFET

Description

The SSG9575 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

  • Low on-resistance.
  • Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D.
  • Fast switching characteristic 9575SC Date Code G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -60 ±25 -4 -3.2 -20 3 0.02 Unit V V A A A W W / oC o 3 Total Power Dissipation.

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Datasheet Details

Part number SSG9575
Manufacturer SeCoS
File Size 258.39 KB
Description P-Channel MOSFET
Datasheet download datasheet SSG9575 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSG9575 -4A, -60V,RDS(ON) 90m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG9575 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 3.80 4.00 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF Features * Low on-resistance * Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.