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Elektronische Bauelemente
SSG8N10
8A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
MARKING
8N10SC
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size 13 inch
SOP-8
B
LD M
A
H
G
C N
JK FE
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
SSG8N10 Datasheet
