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SSG8603-C - N & P-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSG8603-C is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet preview – SSG8603-C

Datasheet Details

Part number SSG8603-C
Manufacturer SeCoS
File Size 955.71 KB
Description N & P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSG8603-C Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SSG8603-C N-Ch: 10.4A, 30V, RDS(ON) 12m P-Ch: -7.8A, -30V, RDS(ON) 20m N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG8603-C is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG8603-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 8603  = Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF.
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