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SSG6618 - N-Channel Enhancement Mode Power Mos.FET

Datasheet Summary

Description

The SSG6618 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Fast Switching Characteristic.
  • Simple Drive Requirement.
  • Low Gate Charge Date Code D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D 6618SC G 1 S1 2 G1 3 S2 4 G2 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±20 7 5.8 30 2.5 0.02 Unit V V A A A W W/ C o o Total Power Dissip.

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Datasheet preview – SSG6618

Datasheet Details

Part number SSG6618
Manufacturer SeCoS
File Size 375.21 KB
Description N-Channel Enhancement Mode Power Mos.FET
Datasheet download datasheet SSG6618 Datasheet
Additional preview pages of the SSG6618 datasheet.

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Full PDF Text Transcription

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SSG6618 7A, 30V,RDS(ON) 30m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG6618 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 Features * Fast Switching Characteristic * Simple Drive Requirement * Low Gate Charge Date Code D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.
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