SSG5N06-C Datasheet PDF - SeCoS N-Channel Enhancement Mode Power MosFET Specs

SSG5N06-C - N-Channel Enhancement Mode Power MosFET

Datasheet Summary

Description

The SSG5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSG5N06-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

Advanced High Cell Density Trench Technology.
Super Low Gate Charge.
Green Device Available.

Datasheet Details

Part number	SSG5N06-C
Manufacturer	SeCoS
File Size	683.66 KB
Description	N-Channel Enhancement Mode Power MosFET
Datasheet	SSG5N06-C Datasheet
Additional preview pages of the SSG5N06-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSG5N06-C 5A, 60V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG5N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 5N06   = Date code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.

Published: May 28, 2024 |