Datasheet4U Logo Datasheet4U.com

SSG4N10E - Dual-N Enhancement Mode Power MOSFET

Description

The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

Features

  • Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE.

📥 Download Datasheet

Datasheet Details

Part number SSG4N10E
Manufacturer SeCoS
File Size 556.92 KB
Description Dual-N Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4N10E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSG4228 30V Dual N-Channel MOSFET VBsemi
SSG42N60 50A 600V FAST POWER IGBT Solid States Devices
SSG4394N N-Channel Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie
SSG4396N N-Channel MOSFET SeCoS Halbleitertechnologie
SSG4510 N & P-Ch Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie

Other Datasheets by SeCoS

Part Number Description
SSG4224 N-Ch Enhancement Mode Power MOSFET
SSG4226 N-Channel MOSFET
SSG4228 Dual-N Enhancement Mode Power MOSFET
SSG4362N N-Ch Enhancement Mode Power MOSFET
SSG4390N N-Ch Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. FEATURES Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE MARKING CODE 4N10ESS = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch Dimensions in millimeters REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
Published: |