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SSG4930N - Dual N-Channel MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SOP-8 saves board space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet preview – SSG4930N

Datasheet Details

Part number SSG4930N
Manufacturer SeCoS
File Size 453.68 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SSG4930N Datasheet
Additional preview pages of the SSG4930N datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSG4930N 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8 2.
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