Datasheet4U Logo Datasheet4U.com

SSG4842N - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology A C N J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E REF. A B C D E F G.

📥 Download Datasheet

Datasheet preview – SSG4842N

Datasheet Details

Part number SSG4842N
Manufacturer SeCoS
File Size 136.58 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4842N Datasheet
Additional preview pages of the SSG4842N datasheet.

📁 Similar Datasheet

  • SSG4228 - 30V Dual N-Channel MOSFET (VBsemi)
  • SSG42N60 - 50A 600V FAST POWER IGBT (Solid States Devices)
  • SSG4394N - N-Channel Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4396N - N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SSG4510 - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4530C - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4536C - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4565 - Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie GmbH)
  • SSG4575 - Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie GmbH)
  • SSG200EF60E - 200 AMP N-CHANNEL IGBT (Solid States Devices)
Other Datasheets by SeCoS
  • SSG4841P - P-Ch Enhancement Mode Power MOSFET
  • SSG4800J-C - Dual-N Enhancement Mode Power MOSFET
  • SSG4801 - Dual-P Enhancement Mode Power MOSFET
  • SSG4825P - P-Channel Mode Power MOSFET
  • SSG4825PE - P-Channel Mode Power MOSFET
  • SSG4835P - P-Ch Enhancement Mode Power MOSFET
  • SSG4835PR-C - P-Ch Enhancement Mode Power MOSFET
  • SSG4874N - N-Channel Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
SSG4842N Elektronische Bauelemente 23A , 40V , RDS(ON) 9 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology A C N J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E REF.
Published: |