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SSG4841P - P-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • A C N J K.
  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOIC-8 saves board space. Fast switching speed. High performance trench technology. H G F E REF. A B C D E F G.

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Datasheet Details

Part number SSG4841P
Manufacturer SeCoS
File Size 170.88 KB
Description P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4841P Datasheet
Additional preview pages of the SSG4841P datasheet.

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Full PDF Text Transcription

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SSG4841P Elektronische Bauelemente -9.0 A, -40 V, RDS(ON) 35 m P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES  A C N J K    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOIC-8 saves board space. Fast switching speed. High performance trench technology. H G F E REF.
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