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SSG4801 - Dual-P Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V.

The device is suitable for use as a load switch or in PWM applications.

Features

  • A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E.

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Datasheet preview – SSG4801

Datasheet Details

Part number SSG4801
Manufacturer SeCoS
File Size 1.00 MB
Description Dual-P Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4801 Datasheet
Additional preview pages of the SSG4801 datasheet.

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Full PDF Text Transcription

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SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. SOP-8 B L D M FEATURES    A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E MARKING REF. 4801SS    = Date Code A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.
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