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SSG4800J-C - Dual-N Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSG4800J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • Simple Drive Requirement Low Gate Charge Green Device Available.

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Datasheet preview – SSG4800J-C

Datasheet Details

Part number SSG4800J-C
Manufacturer SeCoS
File Size 385.90 KB
Description Dual-N Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4800J-C Datasheet
Additional preview pages of the SSG4800J-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSG4800J-C 6.9A, 30V, RDS(O ) 22mΩ Dual- Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4800J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. SOP-8 B FEATURES Simple Drive Requirement Low Gate Charge Green Device Available MARKING Q4800 ． = Date Code PACKAGE INFORMATION Package MPQ SOP-8 4K Leader Size 13 inch ORDER INFORMATION Part Number Type SSG4800J-C Lead (Pb)-free and Halogen-free A H G LD M C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.
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