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SSG4490N - N-Channel Enhancement Mode Power MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SOIC-8 saves board space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet Details

Part number SSG4490N
Manufacturer SeCoS
File Size 144.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4490N Datasheet

Full PDF Text Transcription

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Elektronische Bauelemente SSG4490N 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOIC-8 saves board space.  Fast switching speed.  High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8 2.5K LeaderSize 13’ inch SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min.
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