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Elektronische Bauelemente
SSG3215B-C
1.7A, 150V, RDS(O ) 330mΩ Dual- Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG3215B-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSG3215B-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available
MARKING
3215B
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.
SSG3215B-C Datasheet
