SSE80N06-C Datasheet PDF - SeCoS N-Ch Enhancement Mode Power MOSFET Specs

SSE80N06-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSE80N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSE80N06-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

Datasheet Details

Part number	SSE80N06-C
Manufacturer	SeCoS
File Size	520.88 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSE80N06-C Datasheet
Additional preview pages of the SSE80N06-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSE80N06-C 80A, 60V, RDS(ON) 8.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE80N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE80N06-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 80N06 =Date Code ORDER INFORMATION Part Number Type SSE80N06-C Lead (Pb)-free and Halogen-free REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.5 2.54. 3.40 12.7 14.7 1.17 1.78 0.4 1.

Published: May 28, 2024 |