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SSE190N04S-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSE190N04S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • High Speed Power Switching Super Low Gate Charge Green Device Available.

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Datasheet preview – SSE190N04S-C

Datasheet Details

Part number SSE190N04S-C
Manufacturer SeCoS
File Size 794.45 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSE190N04S-C Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SSE190 04S-C 190A, 40V, RDS(O ) 2.6mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE190N04S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE190N04S-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 190N04S Date Code ORDER INFORMATION 1 Gate Part Number Type SSE190N04S-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.5 2.54. 3.40 12.7 14.7 1.17 1.
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