SSE166N10SV-C Datasheet PDF - SeCoS N-Channel Shielded Gate Trench Power MOSFET Specs

SSE166N10SV-C - N-Channel Shielded Gate Trench Power MOSFET

Datasheet Summary

Description

The SSE166N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

Shielded Gate Trench Technology High Speed Power Switching Super Low Gate Charge Green Device Available.

Datasheet Details

Part number	SSE166N10SV-C
Manufacturer	SeCoS
File Size	500.08 KB
Description	N-Channel Shielded Gate Trench Power MOSFET
Datasheet	SSE166N10SV-C Datasheet
Additional preview pages of the SSE166N10SV-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSE166N10SV-C 166A, 100V, RDS(ON) 4.5mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE166N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE166N10SV-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES Shielded Gate Trench Technology High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 166N10SV =Date Code ORDER INFORMATION 1 Gate Part Number Type SSE166N10SV-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.

Published: May 28, 2024 |