SSE110N03-03P Datasheet PDF - SeCoS N-Channel Enhancement Mode MOSFET Specs

SSE110N03-03P - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switching speed. High performance trench technology. G E A S F H I J K L U X M P.

Datasheet Details

Part number	SSE110N03-03P
Manufacturer	SeCoS
File Size	121.36 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSE110N03-03P Datasheet
Additional preview pages of the SSE110N03-03P datasheet.

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Full PDF Text Transcription

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SSE110N03-03P Elektronische Bauelemente 110A , 30V , RDS(ON) 2.5mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C TO-220P B R T FEATURES Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switching speed. High performance trench technology. G E A S F H I J K L U X M P APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Published: Apr 13, 2012 |