SSE104N10-C Datasheet PDF - SeCoS N-Ch Enhancement Mode Power MOSFET Specs

SSE104N10-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSE104N10-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available.

Datasheet Details

Part number	SSE104N10-C
Manufacturer	SeCoS
File Size	600.50 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSE104N10-C Datasheet
Additional preview pages of the SSE104N10-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSE104 10-C 104A, 100V, RDS(O ) 12mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE104N10-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE104N10-C meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO-220 FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available MARKING 104N10 Date Code 1 ORDER INFORMATION Gate Part Number Type SSE104N10-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min.

Published: May 28, 2024 |