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SSD9575 - P-Channel MOSFET

Datasheet Summary

Description

The SSD9575 provide the designer with the best combination of fast switching, ruggerized device device design, low on-resistance and cost -effectiveness.

Features

  • Low On-Resistance.
  • Simple Drive Requirement.
  • Fast Switching D G Absolute Maximum Ratings S Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max.

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Datasheet Details

Part number SSD9575
Manufacturer SeCoS
File Size 616.74 KB
Description P-Channel MOSFET
Datasheet download datasheet SSD9575 Datasheet
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Elektronische Bauelemente SSD9575 -15A, -60V,RDS(ON)90m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSD9575 provide the designer with the best combination of fast switching, ruggerized device device design, low on-resistance and cost -effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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