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SSD65N10S-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

SSD65N10S-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

SSD65N10S-C meets the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SSD65N10S-C
Manufacturer SeCoS
File Size 731.38 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSD65N10S-C Datasheet
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Elektronische Bauelemente SSD65 10S-C 65A , 100V , RDS(O ) 9.8mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD65N10S-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. SSD65N10S-C meets the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 65N10S Date Code PACKAGE INFORMATION Package MPQ TO-252 2.
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