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Elektronische Bauelemente
SSD29N10J-C
29A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD29N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
The SSD29N10J-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
29N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.
SSD29N10J-C Datasheet
