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SPRD8503-C - N & P-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SPRD8503-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet preview – SPRD8503-C

Datasheet Details

Part number SPRD8503-C
Manufacturer SeCoS
File Size 1.20 MB
Description N & P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SPRD8503-C Datasheet
Additional preview pages of the SPRD8503-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SPRD8503-C N-Ch: 36A, 30V, RDS(ON) 12m P-Ch: -33A, -30V, RDS(ON) 16m N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD8503-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD8503-C meet the RoHS and Green Product requirement with full function reliability approved.
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