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SPR60N04-C - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SPR60N04-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SPR60N04-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced High Cell Density Technology Super Low Gate Charge.

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Datasheet preview – SPR60N04-C

Datasheet Details

Part number SPR60N04-C
Manufacturer SeCoS
File Size 354.29 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SPR60N04-C Datasheet
Additional preview pages of the SPR60N04-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SPR60 04-C 60A, 40V, RDS(O ) 8.5mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR60N04-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR60N04-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Technology Super Low Gate Charge MARKING 60N04 = Date code PR-8PP B D C θ eE A d b g PACKAGE INFORMATION Package MPQ Leader Size PR-8PP 3K 13 inch S S ORDER INFORMATION S Part Number Type G SPR60N04-C Lead (Pb)-free and Halogen-free F G D REF.
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