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SPR35N10S-C - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SPR35N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SPR35N10S-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Lower Gate Charge Advanced high cell density Trench technology Green Device Available.

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Datasheet preview – SPR35N10S-C

Datasheet Details

Part number SPR35N10S-C
Manufacturer SeCoS
File Size 455.09 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SPR35N10S-C Datasheet
Additional preview pages of the SPR35N10S-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SPR35 10S-C 35A, 100V, RDS(O ) 17mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR35N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR35N10S-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING PR-8PP 35N10S = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type SPR35N10S-C Lead (Pb)-free and Halogen-free REF.
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