SMS3110-C Datasheet PDF - SeCoS N-Ch Enhancement Mode Power MOSFET Specs

SMS3110-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

Advanced High Cell Density Trench Technology.
Super Low Gate Charge.
Green Device Available.

Datasheet Details

Part number	SMS3110-C
Manufacturer	SeCoS
File Size	434.22 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SMS3110-C Datasheet
Additional preview pages of the SMS3110-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMS3110-C 1.2A, 100V, RDS(ON) 310mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS3110-C meet the RoHS and Green Product Requirement with full function reliability approved. SOT-23 A L 3 Top View CB 1 1 2 K E 3 2 FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 3110 D F G H J REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0 1.40 1.70 2.30 0.28 0.55 REF.

Published: May 27, 2024 |