Datasheet Details
| Part number | SMG351AN |
|---|---|
| Manufacturer | SeCoS |
| File Size | 522.74 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SMG351AN Datasheet
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Description
The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
Features
- Lower Gate Charge.
- Small Package Outline H Drain Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±20 3 10 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A W W/ Thermal Data Parameter Thermal Resista.