Datasheet4U Logo Datasheet4U.com

SMG2390N - N-Channel MosFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board space.
  • Fast switching speed.
  • High performance trench technology.

📥 Download Datasheet

Datasheet preview – SMG2390N

Datasheet Details

Part number SMG2390N
Manufacturer SeCoS
File Size 138.39 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2390N Datasheet
Additional preview pages of the SMG2390N datasheet.

📁 Similar Datasheet

  • SMG2392N - N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SMG2310B - N-Channel 60V MOSFET (VBsemi)
  • SMG2361P - P-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SMG2 - Voltage-Controlled Attenuator Module (Tyco Electronics)
  • SMG2 - Voltage Controlled Attenuator Module (MA-COM)
  • SMG240128A - LCM Module (Sunman)
  • SMG240128D - LCD Module (Sunman)
  • SMG240128E - LCD Module (Sunman)
  • SMG2D60C - THYRISTOR (SanRex Corporation)
  • SMG2D60D - THYRISTOR (SanRex Corporation)
Other Datasheets by SeCoS

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700  RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 150 RDS(on) ( 0.
Published: |