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SMG2318N - N-Channel MosFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board Space. Fast switching speed. Low Gate Charge.

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Datasheet Details

Part number SMG2318N
Manufacturer SeCoS
File Size 469.24 KB
Description N-Channel MosFET
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Full PDF Text Transcription

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Elektronische Bauelemente SMG2318N 1.2 A, 30 V, RDS(ON) 160 mΩ N-Channel Logic Level MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board Space. Fast switching speed. Low Gate Charge APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.
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