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SMG2314 - N-Channel MosFET

Datasheet Summary

Description

The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device.

The SMG2314 is universally used for all commercial-industrial applications.

Features

  • Low On-Resistance.
  • Capable Of 2.5V Gate Drive A L 3 Top View 21 B D G C Marking : 2314 D H Drain Gate Source K SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 J H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@4.5V Continuous Drain Current,3 VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear De.

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Datasheet Details

Part number SMG2314
Manufacturer SeCoS
File Size 540.88 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2314 Datasheet
Additional preview pages of the SMG2314 datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. The SMG2314 is universally used for all commercial-industrial applications. S Features * Low On-Resistance * Capable Of 2.5V Gate Drive A L 3 Top View 21 B D G C Marking : 2314 D H Drain Gate Source K SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 J H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@4.
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