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SJP65SN10J-C - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability.

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Datasheet Details

Part number SJP65SN10J-C
Manufacturer SeCoS
File Size 241.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SJP65SN10J-C Datasheet
Additional preview pages of the SJP65SN10J-C datasheet.

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Elektronische Bauelemente SJP65SN10J-C 65A, 100V, RDS(ON) 11mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS High side switch in POL DC/DC converter Secondary side synchronous rectifier MARKING CJAC 65SN10 = Production Line Indication REF. A B C D E F G Millimeter Min. Max. 5.65 5.85 5.
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