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SDT9A5P02 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SDT9A5P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The SDT9A5P02 meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SDT9A5P02
Manufacturer SeCoS
File Size 611.93 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SDT9A5P02 Datasheet
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Elektronische Bauelemente SDT9A5P02 -9.5A, -20V, RDS(O ) 24mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDT9A5P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT9A5P02 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 9A5P02 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.
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