SDT4A6N10ESV-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Features

The SDT4A6N10ESV-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter.

SeCoS

📥 Download Datasheet

Datasheet Details

Part number	SDT4A6N10ESV-C
Manufacturer	SeCoS
File Size	536.81 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SDT4A6N10ESV-C Datasheet
Additional preview pages of the SDT4A6N10ESV-C datasheet.

📁 Similar Datasheet

SDT400 - Photo-Transistor Optocoupler (Solid State Optronics)
SDT400-R - Photo-Transistor Optocoupler (Solid State Optronic)
SDT40100CT - 40A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT40100CTFP - 40A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT40120CT - 40A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT40120CTFP - 40A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT40A100CT - 40A TRENCH SCHOTTKY RECTIFIER (Diodes)
SDT40A100CTFP - 40A TRENCH SCHOTTKY RECTIFIER (Diodes)
SDT40A120CT - 40A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT40A120CTFP - 40A TRENCH SCHOTTKY RECTIFIER (DIODES)

Other Datasheets by SeCoS

SDT1216 - P-Channel MOSFET
SDT2P02 - Dual P-Channel MOSFET
SDT2P02-C - Dual-P Enhancement Mode MOSFET
SDT2P03-C - Dual-P Enhancement Mode MOSFET
SDT3005 - N-Channel MOSFET
SDT3A5N06-C - N-Channel Enhancement Mode Power MOSFET
SDT3N03 - Dual-N Enhancement Mode MOSFET
SDT3P02-C - Dual-P Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text

Elektronische Bauelemente SDT4A6N10ESV-C 4.6A, 100V, RDS(ON) 59mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES The SDT4A6N10ESV-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SDT4A6N10ESV-C meet the RoHS and Green Product requirement with full function reliability approved. DFN2x2-6J FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available  ESD Protection MARKING 4A6N10 .  = Date code PACKAGE INFORMATION Package MPQ DFN2x2-6J 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.

Published: Apr 30, 2024 |