Datasheet4U Logo Datasheet4U.com

SDT3A5N06-C - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

📥 Download Datasheet

Datasheet preview – SDT3A5N06-C

Datasheet Details

Part number SDT3A5N06-C
Manufacturer SeCoS
File Size 332.68 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SDT3A5N06-C Datasheet
Additional preview pages of the SDT3A5N06-C datasheet.

📁 Similar Datasheet

Other Datasheets by SeCoS

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SDT3A5 06-C 3.5A, 60V, RDS(O ) 100 mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.
Published: |